FDB8874 Datasheet, Fairchild Semiconductor

* rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
* rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)
* Low gate.

* DC/DC converters
* High power and current handling capability D GATE G SOURCE DRAIN (FLANGE) TO-263AB FDB .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.